K2563 Просмотр технического описания (PDF) - Shindengen
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K2563 Datasheet PDF : 12 Pages
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VX-2 Series Power MOSFET
2SK2563 ( F4F60VX2 )
●Electrical Characteristics Tc = 25℃
Item
Symbol
Conditions
Drain-Source Breakdown Voltage
V(BR)DSS ID = 1mA, VGS = 0V
Zero Gate Voltage Drain Current
IDSS VDS = 600V, VGS = 0V
Gate-Source Leakage Current
IGSS VGS = ±30V, VDS = 0V
Forward Tranｓconductance
gfs ID = 2A, VDS = 10V
Static Drain-Source On-ｓtate Resistance RDS(ON) ID = 2A, VGS = 10V
Gate Threshold Voltage
VTH ID = 1mA, VDS = 10V
Source-Drain Diode Forwade Voltage
VSD IS = 2A, VGS = 0V
Theｒmal Resistance
θjc junction to case
Total Gate Charge
Qg VDD = 400V, VGS = 10V, ID = 4A
Input Capacitance
Ciss
Reverse Transfer Capacitance
Crss VDS = 10V, VGS = 0V, f = 1MHZ
Output Capacitance
Coss
Turn-On Time
ton ID = 2A, RL = 75Ω, VGS = 10V
Turn-Off Time
toff
Min. Typ. Max. Unit
600
V
250 μA
±0.1
1.5 3.8
S
1.8 2.2 Ω
2.5 3.0 3.5 V
1.5
4.16 ℃/Ｗ
21
nC
540
40
pF
120
28 40 ns
110 160
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