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2SK2661 Просмотр технического описания (PDF) - Toshiba

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2SK2661 Datasheet PDF : 6 Pages
1 2 3 4 5 6
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Gate leakage current
Gate–source breakdown voltage
Drain cut–off current
Drain–source breakdown voltage
Gate threshold voltage
Drain–source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
IGSS
V (BR) GSS
IDSS
V (BR) DSS
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VGS = ±25 V, VDS = 0 V
IG = ±10 μA, VDS = 0 V
VDS = 500 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 2.5 A
VDS = 10 V, ID = 2.5 A
VDS = 25 V, VGS = 0 V, f = 1 MHz
Rise time
tr
2SK2661
Min Typ. Max Unit
±10
μA
±30 —
V
100
μA
500
V
2.0
4.0
V
— 1.35 1.50
2.5 4.0
S
— 780 —
60
pF
— 200 —
12
Turn–on time
ton
Switching time
Fall time
tf
25
ns
15
Turn–off time
Total gate charge (gate–source
plus gate–drain)
Gate–source charge
Gate–drain (“miller”) Charge
toff
Qg
Qgs
VDD 400 V, VGS = 10 V, ID = 5 A
Qgd
60
17
11
nC
6
Source–Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
IDR = 5 A, VGS = 0 V
IDR = 5 A, VGS = 0 V
dIDR / dt = 100 A / μs
Min Typ. Max Unit
5
A
20
A
1.7
V
— 1400 —
ns
9
μC
Marking
K2661
Part No. (or abbreviation code)
Lot No.
Note 4
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
2
2009-09-29

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