2SK2013 Просмотр технического описания (PDF) - Toshiba

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2SK2013

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

Toshiba 

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

2SK2013

2SK2013

Audio Frequency Power Amplifier Application

z High breakdown voltage

z High forward transfer admittance

z Complementary to 2SJ313

: VDSS = 180V

: |Yfs| = 0.7 S (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Drain−source voltage

Gate−source voltage

Drain current

(Note 2)

Drain power dissipation (Tc = 25°C)

Channel temperature

Storage temperature range

VDSS

VGSS

ID

PD

Tch

Tstg

180

V

±20

V

1

A

25

W

150

°C

−55 to 150

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature, etc.)

may cause this product to decrease in the reliability significantly even if the

operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings. Please design the appropriate reliability

upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual reliability data

(i.e. reliability test report and estimated failure rate, etc).

Marking

Unit: mm

JEDEC

―

JEITA

SC−67

TOSHIBA

2-10R1B

Weight: 1.9 g (typ.)

K2013

Part No.

(or abbreviation code)

Lot No.

Note 1

Note 1: A line under a Lot No. identifies the indication of product Labels.

Not underlined: [[Pb]]/INCLUDES > MCV

Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]

Please contact your TOSHIBA sales representative for details as to

environmental matters such as the RoHS compatibility of Product. The

RoHS is the Directive 2002/95/EC of the European Parliament and of the

Council of 27 January 2003 on the restriction of the use of certain

hazardous substances in electrical and electronic equipment.

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Gate leakage current

Drain−source breakdown voltage

Gate−source cut−off voltage (Note 3)

Drain−source saturation voltage

Forward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

IGSS

V (BR) DSS

VGS (OFF)

VDS (ON)

|Yfs|

Ciss

Coss

Crss

VDS = 0, VGS = ±20 V

ID = 10 mA, VGS = 0

VDS = 10 V, ID = 10 mA

ID = 0.6 A, VGS = 10 V

VDS = 10 V, ID = 0.3 A

VDS = 10 V, VGS = 0, f = 1 MHz

VDS = 10 V, VGS = 0, f = 1 MHz

VDD ≈ 10 V, VGS = 0, f = 1 MHz

Note 2: Ensure that the channel temperature does not exceed 150°C.

Note 3: VGS (OFF) Classification

O: 0.8~1.6,

This transistor is an electrostatic-sensitive device.

Please handle with caution.

Y: 1.4~2.8

1

Min Typ. Max Unit

—

— ±100 nA

180

—

—

V

1.8

—

2.8

V

—

1.7 3.0

V

—

0.7

—

S

— 170 —

—

45

—

pF

—

17

—

2009-09-29

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