K1671 Просмотр технического описания (PDF) - Renesas Electronics

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K1671

Silicon N-Channel MOS FET

Renesas Electronics 

2SK1671

Absolute Maximum Ratings

Item

Drain to source voltage

Gate to source voltage

Drain current

Drain peak current

Body to drain diode reverse drain current

Channel dissipation

Channel temperature

Storage temperature

Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value at TC = 25°C

Symbol

VDSS

VGSS

ID

ID(pulse)*1

IDR

Pch*2

Tch

Tstg

Ratings

250

±30

30

120

30

125

150

–55 to +150

(Ta = 25°C)

Unit

V

V

A

A

A

W

°C

°C

Electrical Characteristics

Item

Symbol Min

Drain to source breakdown voltage V(BR)DSS 250

Gate to source breakdown voltage V(BR)GSS ±30

Gate to source leak current

IGSS

—

Zero gate voltage drain current

IDSS

—

Gate to source cutoff voltage

VGS(off)

2.0

Static drain to source on state

resistance

RDS(on)

—

Forward transfer admittance

|yfs|

12

Input capacitance

Ciss

—

Output capacitance

Coss

—

Reverse transfer capacitance

Crss

—

Turn-on delay time

td(on)

—

Rise time

tr

—

Turn-off delay time

td(off)

—

Fall time

tf

—

Body to drain diode forward voltage

VDF

—

Body to drain diode reverse recovery

trr

—

time

Note: 3. Pulse test

Typ

—

—

—

—

—

0.075

Max

—

—

±10

250

3.0

0.095

20

—

3000

—

1250

—

170

—

45

—

170

—

250

—

130

—

1.0

—

400

—

Unit

V

V

µA

µA

V

Ω

(Ta = 25°C)

Test conditions

ID = 10 mA, VGS = 0

IG = ±100 µA, VDS = 0

VGS = ±25 V, VDS = 0

VDS = 200 V, VGS = 0

ID = 1 mA, VDS = 10 V

ID = 15 A, VGS = 10 V *3

S

ID = 15 A, VDS = 10 V *3

pF VDS = 10 V, VGS = 0,

pF f = 1 MHz

pF

ns ID = 15 A, VGS = 10 V,

ns RL = 2 Ω

ns

ns

V IF = 30 A, VGS = 0

ns IF = 30 A, VGS = 0,

diF/dt = 100 A/µs

Rev.2.00 Sep 07, 2005 page 2 of 6

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