2SK161 Просмотр технического описания (PDF) - Toshiba

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2SK161

Field Effect Transistor Silicon N Channel Junction Type

Toshiba 

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type

2SK161

FM Tuner Applications

VHF Band Amplifier Applications

2SK161

Unit: mm

· Low noise figure: NF = 2.5dB (typ.) (f = 100 MHz)

· High forward transfer admittance: |Yfs| = 9 mS (typ.)

· Extremely low reverse transfer capacitance: Crss = 0.1 pF (typ.)

Maximum Ratings (Ta = 25°C)

Characteristics

Gate-drain voltage

Gate current

Drain power dissipation

Junction temperature

Storage temperature range

Symbol

VGDO

IG

PD

Tj

Tstg

Rating

Unit

-18

V

10

mA

200

mW

125

°C

-55~125

°C

Electrical Characteristics (Ta = 25°C)

JEDEC

―

JEITA

―

TOSHIBA

2-4E1D

Weight: 0.13 g (typ.)

Characteristics

Symbol

Test Condition

Gate leakage current

Gate-drain breakdown voltage

Drain current

Gate-source cut-off voltage

Forward transfer admittance

Input capacitance

Reverse transfer capacitance

Power gain

Noise figure

IGSS

VGS = -0.5 V, VDS = 0

V (BR) GDO IG = -100 mA

IDSS

(Note)

VGS = 0, VDS = 10 V

VGS (OFF) VDS = 10 V, ID = 1 mA

ïYfsï

VGS = 0, VDS = 10 V, f = 1 kHz

Ciss

Crss

GPS

VDS = 10 V, VGS = 0, f = 1 MHz

VGD = -10 V, f = 1 MHz

VDD = 10 V, f = 100 MHz (Figure 1)

NF

VDD = 10 V, f = 100 MHz (Figure 1)

Note: IDSS classification O: 1.0~3.0 mA, Y: 2.5~6.0 mA, GR: 5.0~10.0 mA

Min Typ. Max Unit

¾

¾

-10

nA

-18

¾

¾

V

1.0

¾

10

mA

-0.4

¾ -4.0

V

¾

9

¾

mS

¾

6.0

¾

pF

¾ 0.10 0.15 pF

¾

18

¾

dB

¾

2.5 3.5

dB

1

2003-03-27

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