2SJ549 Просмотр технического описания (PDF) - Renesas Electronics

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производитель

2SJ549

Silicon P Channel MOS FET

Renesas Electronics 

2SJ549(L), 2SJ549(S)

Silicon P Channel MOS FET

Description

High speed power switching

Features

• Low on-resistance

RDS (on) = 0.11 Ω typ.

• Low drive current

• 4 V gate drive devices

• High speed switching

REJ03G0896-0400

Rev.4.00

Jun 05, 2006

Outline

RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B

(Package name: LDPAK (L) )

(Package name: LDPAK (S)-(1) )

D

4

4

12

3

123

G

S

1. Gate

2. Drain

3. Source

4. Drain

Rev.4.00 Jun 05, 2006 page 1 of 8

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