2SJ541 Просмотр технического описания (PDF) - Renesas Electronics
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2SJ541 Datasheet PDF : 8 Pages
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2SJ541
Silicon P Channel MOS FET
Description
High speed power switching
Features
• Low on-resistance
RDS (on) = 0.075 Ω typ.
• Low drive current.
• 4 V gate drive devices.
• High speed switching.
Outline
RENESAS Package code: PRSS0004AC-A
(Package name: TO-220AB)
D
123
G
S
REJ03G0888-0400
(Previous: ADE-208-590B)
Rev.4.00
Sep 07, 2005
1. Gate
2. Drain (Flange)
3. Source
Rev.4.00 Sep 07, 2005 page 1 of 7
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