2SD875 Просмотр технического описания (PDF) - KEXIN Industrial
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2SD875 Datasheet PDF : 2 Pages
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SMD Type
Transistors
NPN Transistors
■ Typical Characterisitics
PC — Ta
1.4
Printed circut board: Copper
foil area of 1cm2 or more, and
1.2
the board thickness of 1.7mm
for the collector portion.
1.0
0.8
0.6
0.4
0.2
2SD875
IC — VCE
1.2
Ta=25˚C
1.0
IB=10mA
9mA
8mA
0.8
7mA
6mA
5mA
0.6
4mA
3mA
0.4
2mA
0.2
1mA
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
VBE(sat) — IC
100
IC/IB=10
30
10
3
25˚C
1
Ta=–25˚C
75˚C
0.3
0.1
0.03
0.01
1
3 10 30 100 300 1000
Collector current IC (mA)
Cob — VCB
50
IE=0
f=1MHz
Ta=25˚C
40
30
20
10
0
1
3
10
30
100
Collector to base voltage VCB (V)
0
0
2
4
6
8
10
Collector to emitter voltage VCE (V)
hFE — IC
300
VCE=10V
250
Ta=75˚C
200
25˚C
–25˚C
150
100
50
0
1 3 10 30 100 300 1000
Collector current IC (mA)
Area of safe operation (ASO)
10
3
ICP
1
IC
0.3
0.1
Single pulse
TC=25˚C
t=1s
DC
0.03
0.01
0.003
0.001
0.1 0.3 1 3 10 30 100
Collector to emitter voltage VCE (V)
VCE(sat) — IC
10
IC/IB=10
3
1
0.3
Ta=75˚C
0.1
25˚C
–25˚C
0.03
0.01
0.003
0.001
1
3 10 30 100 300 1000
Collector current IC (mA)
fT — IE
200
VCB=10V
Ta=25˚C
160
120
80
40
0
–1
–3
–10
–30
–100
Emitter current IE (mA)
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