2SD875(2001) Просмотр технического описания (PDF) - Panasonic Corporation
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2SD875 Datasheet PDF : 3 Pages
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Transistor
2SD0875 (2SD875)
Silicon NPN epitaxial planer type
For low-frequency power amplification
Complementary to 2SB0767 (2SB767)
Unit: mm
I Features
G Large collector power dissipation PC.
G High collector to emitter voltage VCEO.
G Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
I Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
80
V
Collector to emitter voltage VCEO
80
V
Emitter to base voltage
VEBO
5
V
Peak collector current
ICP
1
A
Collector current
IC
0.5
A
Collector power dissipation PC*
1
W
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 ~ +150
˚C
* Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
4.5±0.1
1.6±0.2
45°
0.4±0.08
0.5±0.08
1.5±0.1
3.0±0.15
321
marking
1.5±0.1
0.4±0.04
1:Base
2:Collector
3:Emitter
EIAJ:SC–62
Mini Power Type Package
Marking symbol : X
I Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
ICBO
VCBO
VCEO
VEBO
hFE1*1
hFE2
VCE(sat)
VBE(sat)
fT
Cob
*1hFE1 Rank classification
VCB = 20V, IE = 0
IC = 10µA, IE = 0
80
IC = 100µA, IB = 0
80
IE = 10µA, IC = 0
5
VCE = 10V, IC = 150mA*2
130
VCE = 5V, IC = 500mA*2
50
IC = 300mA, IB = 30mA*2
IC = 300mA, IB = 30mA*2
VCB = 10V, IE = –50mA*2, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz
0.1
µA
V
V
V
330
100
0.2
0.4
V
0.85 1.2
V
120
MHz
11
pF
*2 Pulse measurement
Rank
R
S
hFE1
Marking Symbol
130 ~ 220 185 ~ 330
XR
XS
Note.) The Part number in the Parenthesis shows conventional
part number.
1
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