D687 Просмотр технического описания (PDF) - SavantIC Semiconductor

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производитель

D687

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

Product Specification

2SD687

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=25mA; IB=0

VCEsat Collector-emitter saturation voltage IC=2A; IB=4mA

VBEsat

Base-emitter saturation voltage

ICBO

Collector cut-off current

IEBO

Emitter cut-off current

hFE-1

DC current gain

IC=2A; IB=4mA

VCB=60V; IE=0

VEB=5V; IC=0

IC=1A ; VCE=2V

hFE-2

DC current gain

IC=3A ; VCE=2V

Switching times

ton

Turn-on time

ts

Storage time

tf

Fall time

IB1=-IB2=6mA

VCC=30V;RL=10=

MIN TYP. MAX UNIT

40

V

1.5

V

2.0

V

20

µA

2.5

mA

2000

1000

0.1

µs

1.0

µs

0.2

µs

2

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