D1677 Просмотр технического описания (PDF) - Inchange Semiconductor

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D1677

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0

V(BR)EBO Emitter-base breakdown voltage

IE=1mA; IC=0

VCEsat Collector-emitter saturation voltage IC=4.5A ;IB=2A

VBEsat Base-emitter saturation voltage

IC=4.5A ;IB=2A

ICBO

Collector cut-off current

VCB=800V; IE=0

IEBO

Emitter cut-off current

VEB=5V; IC=0

hFE

DC current gain

IC=0.5A ; VCE=5V

Product Specification

2SD1677

MIN TYP. MAX UNIT

800

V

6

V

5.0

V

1.5

V

10

μA

10

μA

8

2

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