2SD1119 Просмотр технического описания (PDF) - TY Semiconductor

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2SD1119

Silicon NPN epitaxial planar type

TY Semiconductor 

SMD Type

Features

Low collector-emitter saturation voltage VCE(sat).

Satisfactory operation performances at high efficiency with

the lowvoltage power supply.

TransistIoCrs

Product specification

2SD1119

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Peak collector current

Collector power dissipation

Junction temperature

Storage temperature

Symbol

Rating

Unit

VCBO

40

V

VCEO

25

V

VEBO

7

V

IC

3

A

ICP

5

A

PC

1

W

Tj

150

Tstg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Collector-emitter voltage

Emitter-base voltage

Collector-base cutoff current

Forward current transfer ratio

Collector-emitter saturation voltage

Transition frequency

Collector output capacitance

Symbol

Testconditons

VCEO IC = 1 mA, IB = 0

VEBO IE = 10 ìA, IC = 0

ICBO VCB = 10 V, IB = 0

VCE = 2 V, IC = 0.5 A

hFE

VCE = 2 V, IC = 2 A

VCE(sat) IC = 3 A, IB = 0.1 A

fT VCB = 6 V, IE = -50 mA, f = 200 MHz

Cob VCB = 20 V, IE = 0, f = 1 MHz

Min Typ Max Unit

25

V

7

V

0.1 ìA

230

600

150

1

V

150

MHz

50 pF

hFE Classification

Marking

Rank

hFE

T

Q

R

230 380

340 600

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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