2SC5886 Просмотр технического описания (PDF) - Toshiba
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2SC5886 Datasheet PDF : 5 Pages
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IC – VCE
6
70 mA
50 mA 30 mA 20 mA
Common emitter
Tc = 25°C
4
10 mA
5 mA
2
2 mA
IB = 1 mA
0
0
0
2
4
6
8
Collector-emitter voltage VCE (V)
2SC5886
30000
Common emitter
VCE = 2 V
10000
5000
3000
hFE – IC
1000
500
300
100
50
30
25°C
−55°C
Tc = 100°C
10
0.001 0.003 0.01 0.03 0.1 0.3 1
3
10
Collector current IC (A)
3
Common emitter
IC/IB = 50
1
0.5
0.3
VCE (sat) – IC
0.1
0.05
0.03
0.01
0.005
0.003
25°C
Tc = 100°C
−55°C
0.001
0.001 0.003 0.01 0.03 0.1 0.3
1
3
10
Collector current IC (A)
30
Common emitter
IC/IB = 50
10
5
3
VBE (sat) – IC
1 Tc = −55°C
0.5
0.3
25°C
0.1
0.05
0.03
100°C
0.01
0.001 0.003 0.01 0.03 0.1 0.3 1
3
10
Collector current IC (A)
2
Common emitter
VCE = 2 V
IC – VBE
1
Tc = 100°C
−55°C
25°C
0
0
0.5
1
1.5
Base-emitter voltage VBE (V)
10
Common emitter
5 Tc = 25°C
3
VCE – IB
1
0.5
0.3 2 A
IC = 2.5 A
0.1
1A
0.05
0.03
0.01
0.001 0.003 0.01 0.03 0.1 0.3
1
3
Base current IB (A)
3
2006-11-10
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