2SC5356 Просмотр технического описания (PDF) - Toshiba
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2SC5356 Datasheet PDF : 5 Pages
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TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process)
2SC5356
2SC5356
High Voltage Switching Applications
Switching Regulator Applications
DC-DC Converter Applications
Unit: mm
· Excellent switching times: tf = 0.5 µs (max) (IC = 1.2 A)
· High collectors breakdown voltage: VCEO = 800 V
· High DC current gain: hFE = 15 (min) (IC = 0.15 A)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Rating
Unit
900
V
800
V
7
V
3
A
5
1
A
1.5
W
25
150
°C
−55 to 150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-7B5A
Weight: 0.36 g (typ.)
JEDEC
―
JEITA
―
TOSHIBA
2-7B6A
Weight: 0.36 g (typ.)
1
2002-08-13
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