2SC5027 Просмотр технического описания (PDF) - Unisonic Technologies
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2SC5027 Datasheet PDF : 4 Pages
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2SC5027
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS(Cont.)
Power vs. Temperature Derating Curve
80
70
60
50
40
30
20
10
0
0 25 50 75 100 125 150 175
Temperature, TC (℃)
Reverse Bias Operating Area
Collector Current vs. Collector-Emitter Voltage
100
IB2=-0.3A
10
1
0.1
0.01
10
100us
100
1ms
1000
Collector-Emitter Voltage, VCE (V)
5000
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R203-027,C
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