C4510 Просмотр технического описания (PDF) - Quanzhou Jinmei Electronic

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C4510

Silicon NPN Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CBO Collector-base breakdown voltage IC=1mA; IE=0

VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A; IB=0

V(BR)EBO Emitter-base breakdown voltage

IE=1mA; IC=0

VCEsat Collector-emitter saturation voltage IC=6A; IB=1.2A

VBEsat Base-emitter saturation voltage

IC=6A; IB=1.2A

ICBO

Collector cut-off current

VCB=450V; IE=0

IEBO

Emitter cut-off current

VEB=10V; IC=0

hFE

DC current gain

IC=2A ; VCE=5V

Switching times

ton

Turn-on time

tstg

Storage time

tf

Fall time

IC=7.5A;RL=20Ω

IB1=0.75A; IB2=-1.5A

Pw = 20μs; Duty≤2%

Product Specification

2SC4510

MIN TYP. MAX UNIT

500

V

400

V

10

V

0.8

V

1.2

V

100 μA

100 μA

25

65

1.0

μs

2.5

μs

0.5

μs

2

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