C4517 Просмотр технического описания (PDF) - SavantIC Semiconductor

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C4517

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

Product Specification

2SC4517 2SC4517A

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0

VCEsat Collector-emitter saturation voltage IC=1A; IB=0.2A

VBEsat

Base-emitter saturation voltage

IC=1A; IB=0.2A

ICBO

Collector cut-off current

VCB=800V; IE=0

IEBO

Emitter cut-off current

VEB=7V; IC=0

hFE

DC current gain

IC=1A ; VCE=4V

COB

Output capacitance

IE=0; VCB=10V;f=1MHz

fT

Transition frequency

IE=-0.25A ; VCE=12V

Switching times

ton

Turn-on time

ts

Storage time

tf

Fall time

IC=1.0A IB1=0.15A

IB2=-0.45A

VCC=250V ,RL=250B

MIN TYP. MAX UNIT

550

V

0.5

V

1.2

V

100

µA

100

µA

10

30

35

pF

6

MHz

0.7

µs

4.0

µs

0.5

µs

2

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