C4313 Просмотр технического описания (PDF) - Inchange Semiconductor

Номер в каталоге

Компоненты Описание

Список матч

C4313

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SC4313

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A; IB= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB=B 1A

VBE(sat) Base-Emitter Saturation Voltage

IC= 5A; IB=B 1A

ICBO

Collector Cutoff Current

At rated Voltage

ICEO

Collector Cutoff Current

At rated Voltage

IEBO

Emitter Cutoff Current

At rated Voltage

hFE-1

DC Current Gain

IC= 5A; VCE= 2V

hFE-2

DC Current Gain

IC= 1mA; VCE= 2V

fT

Current-Gain—Bandwidth Product IC= 1A; VCE= 10V

Switching times

ton

Turn-on Time

tstg

Storage Time

tf

Fall Time

IC= 5A, IB1= -IB2= 1A;

RL= 50Ω; VBB2= 4V;

VCC= 250V

MIN TYP. MAX UNIT

800

V

1.5

V

2.5

V

100 μA

200 μA

100 μA

7

5

7

MHz

0.5 μs

3.0 μs

0.5 μs

isc Website：www.iscsemi.cn

2

Share Link: