C4303 Просмотр технического описания (PDF) - Inchange Semiconductor

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C4303

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

Product Specification

2SC4303

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0

800

V

V(BR)EBO Emitter-base breakdown voltage

IE=1mA; IC=0

7

V

VCEsat Collector-emitter saturation voltage IC=2.5A;IB=0.5A

1.0

V

VBEsat Base-emitter saturation voltage

ICBO

Collector cut-off current

IEBO

Emitter cut-off current

IC=2.5A;IB=0.5A

VCB=1200V; IE=0

VEB=7V; IC=0

1.5

V

100 μA

100 μA

hFE

DC current gain

固IN电C半H导AN体GE SEMICONDUCTOR fT

Transition frequency

IC=2.5A ; VCE=4V

IE=0.5A ; VCE=12V

6

4

MHz

2

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