C4502 Просмотр технического описания (PDF) - Panasonic Corporation
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C4502 Datasheet PDF : 3 Pages
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Transistors
2SC4502
Silicon NPN epitaxial planar type
For intermediate frequency amplification
■ Features
• High transition frequency fT
• Large collector power dissipation PC
• Allowing supply with the radial taping
6.9±0.1
0.7 4.0
0.65 max.
Unit: mm
2.5±0.1
(0.8)
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) VCBO
50
V
Collector-emitter voltage (Base open) VCEO
45
V
Emitter-base voltage (Collector open) VEBO
4
V
Collector current
IC
50
mA
Collector power dissipation *
PC
1
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg −55 to +150 °C
Note) *: Copper plate at the collector is more than 1 cm2 in area, 1.7 mm in thickness
0.45+–00..0150
2.5±0.5
1.05±0.05
2.5±0.5
0.45+–00..0150
123
1: Emitter
2: Collector
3: Base
MT-2-A1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 100 µA, IE = 0
50
Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0
45
Emitter-base voltage (Collector open) VEBO IE = 100 µA, IC = 0
4
Collector-base cutoff current (Emitter open) ICBO VCB = 20 V, IE = 0
Forward current transfer ratio
hFE VCE = 10 V, IC = 10 mA
20
Collector-emitter saturation voltage
VCE(sat) IC = 20 mA, IB = 2 mA
Transition frequency
fT
VCB = 10 V, IE = −10 mA, f = 200 MHz 300
Reverse transfer capacitance
(Common emitter)
Cre VCB = 10 V, IE = −1 mA, f = 10.7 MHz
V
V
V
0.1
µA
100
0.4
V
MHz
1.5
pF
Power gain
GP VCB = 10 V, IE = −10 mA, f = 58 MHz 22
30
dB
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: February 2003
SJC00157BED
1
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