2SC3897 Просмотр технического описания (PDF) - Inchange Semiconductor

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2SC3897

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(SUS)CEO Collector-emitter sustaining voltage IC=0.1A ;IB=0

VCEsat Collector-emitter saturation voltage IC=8A ;IB=2A

VBEsat Base-emitter saturation voltage

IC=8A ;IB=2A

ICBO

Collector cut-off current

VCB=800V ;IE=0

ICES

Collector cut-off current

VCE=1500V; RBE=0

IEBO

Emitter cut-off current

VEB=4V ;IC=0

hFE-1

DC current gain

IC=1A ; VCE=5V

hFE-2

DC current gain

IC=8A ; VCE=5V

Switching times

tstg

Storage time

tf

Fall time

IC=6A ; VCC=200V

IB1=1.2A; IB2=2.4A

RL=33.3Ω

Product Specification

2SC3897

MIN TYP. MAX UNIT

800

V

5.0

V

1.5

V

10

μA

1.0 mA

1.0 mA

8

4

8

3.0

μs

0.1

0.2 μs

2

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