C3507 Просмотр технического описания (PDF) - Quanzhou Jinmei Electronic

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C3507

Silicon NPN Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-emitter sustaining voltage IC=0.5A ;L=50mH

VCEsat Collector-emitter saturation voltage IC=3A ;IB=0.6A

VBEsat Base-emitter saturation voltage

IC=3A ;IB=0.6A

ICBO

Collector cut-off current

VCB=1000V; IE=0

IEBO

Emitter cut-off current

VEB=7V; IC=0

hFE

DC current gain

IC=3A ; VCE=5V

fT

Transition frequency

IC=0.5A ; VCE=5V;f=1MHz

Switching times

ton

Turn-on time

ts

Storage time

tf

Fall time

IC=3A; VCC=250V

IB1=0.6A ,IB2=-1.2A

Product Specification

2SC3507

MIN TYP. MAX UNIT

800

V

1.5

V

1.5

V

50 μA

50 μA

6

6

MHz

1.0 μs

2.5 μs

0.5 μs

2

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