2SC3638 Просмотр технического описания (PDF) - SavantIC Semiconductor

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2SC3638

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

Product Specification

2SC3638

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ; IB=0

VCEsat Collector-emitter saturation voltage IC=7A ;IB=1.4A

VBEsat

Base-emitter saturation voltage

ICBO

Collector cut-off current

ICES

Collector cut-off current

IEBO

Emitter cut-off current

IC=7A ;IB=1.4A

VCB=500V; IE=0

VCE=900V; RBE=0

VEB=5V; IC=0

hFE

DC current gain

IC=1.4A ; VCE=5V

Switching times

ts

Storage time

tf

Fall time

VCC=200V;IC=7A;

IB1=1.4A; IB2=-2.8A

MIN TYP. MAX UNIT

500

V

2.0

V

1.5

V

10

µA

0.5 mA

1.0 mA

8

3.0

µs

0.1 0.2

µs

2

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