2SC3679 Просмотр технического описания (PDF) - Inchange Semiconductor

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производитель

2SC3679

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

Product Specification

2SC3679

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0

800

V

VCEsat Collector-emitter saturation voltage IC=2A; IB=0.4A

0.5

V

VBEsat Base-emitter saturation voltage

IC=2A ;IB=0.4A

1.2

V

ICBO

Collector cut-off current

VCB=800V ;IE=0

0.1

mA

IEBO

Emitter cut-off current

VEB=7V; IC=0

0.1

mA

hFE

DC current gain

IC=2A ; VCE=4V

10

30

fT

Transition frequency

IC=0.5A ; VCE=12V

6

MHz

固IN电C半H导AN体GE SEMICONDUCTOR COB

Collector output capacitance

Switching times

ton

Turn-on time

ts

Storage time

f=1MHz;VCB=10V

IC=2.0A

IB1=0.3A ,IB2=-1A

75

1.0

5.0

pF

μs

μs

VCC=250V, RL=125Ω

tf

Fall time

1.0

μs

2

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