2SC3284 Просмотр технического описания (PDF) - Sanken Electric co.,ltd.
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2SC3284 Datasheet PDF : 1 Pages
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LAPT 2SC3284
Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1303)
Application : Audio and General Purpose
sAbsolute maximum ratings
Symbol
Ratings
VCBO
150
VCEO
150
VEBO
IC
IB
PC
Tj
Tstg
5
14
3
125(Tc=25°C)
150
–55 to +150
(Ta=25°C)
Unit
V
V
V
A
A
W
°C
°C
sElectrical Characteristics
(Ta=25°C)
Symbol
Conditions
Ratings Unit
ICBO
IEBO
V(BR)CEO
VCB=150V
VEB=5V
IC=25mA
100max
µA
100max
µA
150min
V
hFE
VCE(sat)
fT
COB
VCE=4V, IC=5A
IC=5A, IB=0.5A
VCE=12V, IE=–2A
VCB=10V, f=1MHz
50min∗
2.0max
60typ
200typ
V
MHz
pF
∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180)
sTypical Switching Characteristics (Common Emitter)
VCC
RL
IC
VBB1
VBB2
IB1
(V)
(Ω)
(A)
(V)
(V)
(A)
60
12
5
10
–5
0.5
IB2
ton
tstg
tf
(A)
(µs)
(µs)
(µs)
–0.5 0.2typ 1.5typ 0.35typ
External Dimensions MT-100(TO3P)
15.6±0.4
9.6
4.8±0.2
2.0±0.1
a
ø3.2±0.1
b
2
3
1.05
+0.2
-0.1
0.65 +-00..12
5.45±0.1
5.45±0.1
1.4
BCE
Weight : Approx 6.0g
a. Part No.
b. Lot No.
I C– V CE Characteristics (Typical)
14
650000mmAA
400mA
300mA
12
200mA
150mA
8
100mA
50mA
4
IB=20mA
0
0
1
2
3
4
Collector-Emitter Voltage VCE(V)
V CE( s a t ) – I B Characteristics (Typical)
3
I C– V BE Temperature Characteristics (Typical)
(VCE=4V)
14
10
2
1
IC=10A
5A
0
0
0.2
0.4
0.6
0.8
1.0
Base Current IB(A)
5
0
0
1
2
Base-Emittor Voltage VBE(V)
h FE– I C Characteristics (Typical)
(VCE=4V)
200
h FE– I C Temperature Characteristics (Typical)
(VCE=4V)
200
125˚C
100
Typ
50
100
25˚C
–30˚C
50
θ j-a– t Characteristics
3
1
0.5
20
0.02
0.1
0.5 1
Collector Current IC(A)
5 10 14
20
0.02
0.1
0.5 1
Collector Current IC(A)
5 1014
0.1
1
10
100
Time t(ms)
1000 2000
f T– I E Characteristics (Typical)
(VCE=12V)
80
Typ
60
40
20
0
–0.02
–0.1
–1
–10
Emitter Current IE(A)
66
Safe Operating Area (Single Pulse)
40
10
DC
1
10m
00ms
1ms
s
5
Pc–Ta Derating
130
100
1
Without Heatsink
0.5
Natural Cooling
0.2
3
10
100
200
Collector-Emitter Voltage VCE(V)
50
Without Heatsink
3.5
0
0
25
50
75
100 125 150
Ambient Temperature Ta(˚C)
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