IRFD9110 Просмотр технического описания (PDF) - Intersil
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IRFD9110 Datasheet PDF : 6 Pages
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IRFD9110
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Continuous Source to Drain Current
ISD
Modified MOSFET
Symbol Showing the
D
Pulse Source to Drain Current
ISDM Integral Reverse P-N
(Note 3)
Junction Diode
G
S
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovery Charge6466
VSD
trr
QRR
TJ = 25oC, ISD = -0.7A, VGS = 0V, (Figure 12)
TJ = 150oC, ISD = -0.7A, dISD/dt = 100A/µs
TJ = 150oC, ISD = -0.7A, dISD/dt = 100A/µs
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. VDD = 25V, starting TJ = 25oC, L = 582mH, RG = 25Ω, peak IAS = 0.7A. See Figures 14, 15.
Typical Performance Curves Unless Otherwise Specified
MIN TYP MAX UNITS
-
-
-0.7
A
-
-
-3.0
A
-
-
-1.5
V
-
120
-
ns
-
6.0
-
µC
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
25
50
75
100
125
150
TA, AMBIENT TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT
TEMPERATURE
-1.0
-0.8
-0.6
-0.4
-0.2
0
25
50
75
100
125
150
TA, AMBIENT TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
AMBIENT TEMPERATURE
10µs
1
100µs
1ms
0.1
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
TC = 25oC
0.01 TJ = MAX RATED
10ms
100ms
DC
1
10
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
-5
VGS = -10V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
-4
VGS = -9V
-3
VGS = -8V
-2
VGS = -7V
-1
0
0
VGS = -6V
VGS = -5V
-10
-20
-30
-40
-50
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 4. OUTPUT CHARACTERISTICS
4-41
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