2SC3157 Просмотр технического описания (PDF) - Inchange Semiconductor
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2SC3157 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC3157
DESCRIPTION
·With TO-220 package
·High switching speed
·Low collector saturation voltage
·Complement to type 2SA1261
APPLICATIONS
·For high voltage ,high speed and
power switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
固IN电C半H导AN体GE SEMICONDUCTOR Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
CONDITIONS
Open emitter
Open base
VALUE
150
100
UNIT
V
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
10
A
ICM
Collector current-Peak
20
A
IB
Base current
3.5
A
PT
Total power dissipation
Ta=25℃
TC=25℃
1.5
W
60
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
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