2SC3152 Просмотр технического описания (PDF) - Inchange Semiconductor
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2SC3152 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC3152
DESCRIPTION
·With TO-3PN package
·High breakdown voltage (VCBO≥900V)
·Fast switching speed
·Wide ASO（Safe Operating Area）
APPLICATIONS
·800V/3A Switching Regulator Applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
固IN电C半H导AN体GE SEMICONDUCTOR Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
CONDITIONS
Open emitter
Open base
Open collector
VALUE
900
800
7
UNIT
V
V
V
IC
Collector current
3
A
ICM
Collector current-peak
10
A
IB
Base current
1.5
A
PC
Collector power dissipation
TC=25℃
80
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
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