2SC2757 Просмотр технического описания (PDF) - Inchange Semiconductor

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2SC2757

Silicon NPN RF Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN RF Transistor

isc RF Product Specification

2SC2757

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

VCE(sat) Collector-Emitter Saturation Voltage IC= 10mA ; IB= 1mA

ICBO

Collector Cutoff Current

VCB= 12V; IE= 0

hFE

DC Current Gain

IC= 5mA ; VCE= 10V

0.5

V

0.1 μA

60

240

fT

Current-Gain—Bandwidth Product

IC= 5mA ; VCE= 10V

800 1100

MHz

COB

Output Capacitance

IE= 0 ; VCB= 10V;f= 1.0MHz

1.5 pF

rbb’ • CC Base Time Constant

IC= 5mA ; VCB= 10V;f= 31.9MHz

10 15 ps

‹ hFE Classifications

Marking T32

T33

T34

hFE

60-120 90-180 120-240

isc Website：www.iscsemi.cn

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