INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC2716
DESCRIPTION
·High Power Gain-
: Gp≥12dB,f= 27MHz, PO= 16W
·High Reliability
APPLICATIONS
·Designed for RF power amplifier applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
www.iscsemi.cn PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VALUE UNIT
80
V
30
V
5
V
ICM
Collector Current
6
A
Collector Power Dissipation
@TC=25℃
PC
Collector Power Dissipation
@Ta=25℃
20
W
1.7
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
isc Website:www.iscsemi.cn