C2830 Просмотр технического описания (PDF) - Inchange Semiconductor

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C2830

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

Product Specification

2SC2830

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ; IB=0

400

V

VCEsat Collector-emitter saturation voltage IC=12A; IB=2.4A

1.2

V

VBEsat Base-emitter saturation voltage

IC=12A; IB=2.4A

1.5

V

ICBO

Collector cut-off current

VCB=500V; IE=0

0.1 mA

ICEO

Collector cut-off current

VCE=400V; IB=0

0.1 mA

IEBO

Emitter cut-off current

VEB=7V; IC=0

0.1 mA

hFE-1

DC current gain

IC=2.4A ; VCE=5V

15

50

固IN电C半H导AN体GE SEMICONDUCTOR hFE-2

DC current gain

IC=12A ; VCE=5V

10

2

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