C2612 Просмотр технического описания (PDF) - Inchange Semiconductor
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C2612 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC2612
DESCRIPTION
·With TO-220 package
·High collector breakdown voltage
: VCEO=400V(Min)
APPLICATIONS
·For high voltage ,high speed and
high power switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
Collector current
ICM
Collector current-Peak
IB
Base current
PT
Total power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25℃
VALUE
500
400
7
3
6
1.5
30
150
-55~150
UNIT
V
V
V
A
A
A
W
℃
℃
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