C2612 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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C2612

Silicon NPN Triple Diffused

Hitachi -> Renesas Electronics 

Base to Emitter Saturation Voltage

vs. Collector Current

10

3

1.0

0.3

0.1

0.03

0.01

0.005 0.01

TC = 25°C

IC = 5 IB

0.03 0.1 0.3 1.0 3 5

Collector current IC (A)

2SC2612

Switching Time vs. Collector Current

10

3

tstg

1.0

tf

0.3

0.1

ton

0.03

IC = 5 IB1 = –5 IB2

VCC = 150 V

0.01

0.005 0.01 0.03 0.1 0.3 1.0 3 5

Collector current IC (A)

Switching Time vs. Case Temperature

5

3

tstg

1.0

tf

0.3

0.1

0.05

0

ton

IC = 3 A

IB1 = – IB2 = 0.6 A

RL = 50 Ω

VCC = 150 V

25 50 75 100 125

Case temperature TC (°C)

5

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