2SC2463 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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2SC2463

Silicon NPN Epitaxial

Hitachi -> Renesas Electronics 

2SC2463

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

Ratings

Unit

55

V

50

V

5

V

100

mA

150

mW

150

°C

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Collector to base breakdown V(BR)CBO 55

—

voltage

Collector to emitter breakdown V(BR)CEO 50

—

voltage

Emitter to base breakdown

V(BR)EBO

5

—

voltage

Collector cutoff current

I CBO

—

—

Emitter cutoff current

I EBO

—

—

DC current transfer ratio

hFE*1

250 —

Collector to emitter saturation VCE(sat)

—

—

voltage

Base to emitter voltage

VBE

—

—

Note: 1. The 2SC2463 is grouped by hFE as follows.

Grade

D

E

F

Mark

DD

DE

DF

hFE

250 to 500 400 to 800 600 to 1200

Max Unit

—

V

—

V

—

V

0.5 µA

0.5 µA

1200

0.5 V

0.75 V

Test conditions

IC = 10 µA, IE = 0

IC = 1 mA, RBE = ∞

IE = 10 µA, IC = 0

VCB = 30 V, IE = 0

VEB = 2 V, IC = 0

VCE = 12 V, IC = 2 mA

IC = 10 mA, IB = 1 mA

VCE = 12 V, IC = 2 mA

See characteristic curves of 2SC1345.

2

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