C1921 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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C1921

Silicon NPN Triple Diffused

Hitachi -> Renesas Electronics 

2SC1921

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

Ratings

Unit

250

V

200

V

5

V

50

mA

600

mW

150

°C

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Collector to base breakdown V(BR)CBO 250 —

voltage

Collector to emitter breakdown V(BR)CEO 200 —

voltage

Emitter to base breakdown

V(BR)EBO

5

—

voltage

Collector cutoff current

I CEO

—

—

DC current transfer ratio

hFE

30

—

Collector to emitter saturation VCE(sat)

—

—

voltage

Gain bandwidth product

fT

60

130

Collector output capacitance Cob

—

3

Max Unit Test conditions

—

V

IC = 10 µA, IE = 0

—

V

IC = 1 mA, RBE = ∞

—

V

IE = 10 µA, IC = 0

1.0 µA

300

1.0 V

VCE = 120 V, RBE = ∞

VCE = 6 V, IC = 10 mA

IC = 10 mA, IB = 1 mA

—

MHz VCE = 6 V, IC = 10 mA

4

pF

VCB = 6 V, IE = 0, f = 1 MHz

2

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