C1678 Просмотр технического описания (PDF) - Inchange Semiconductor

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C1678

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCE(sat) Collector-emitter saturation voltage IC=0.5A; IB=50m A

V(BR)CBO Collector-base breakdown voltage

IC=1mA; IE=0

V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0

V(BR)EBO Emitter-base breakdown voltage

IE=1mA; IC=0

ICBO

Collector cut-off current

VCB=30V;IE=0

ICEO

Collector cut-off current

VCE=20V;IB=0

hFE-1

DC current gain

IC=0.5A ; VCE=5V

hFE-2

DC current gain

IC=1.5A ; VCE=5V

COB

Collectpr output capacitance

IE=0 ; VCB=10V, f=1MHz

fT

Transition frequency

IC=0.1A ; VCE=5V

Product Specification

2SC1678

MIN TYP. MAX UNIT

1.0

V

65

V

65

V

4

V

10 μA

100 μA

15

10

30

pF

100

MHz

2

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