C1433 Просмотр технического описания (PDF) - Inchange Semiconductor

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производитель

C1433

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0

V(BR)EBO Emitter-base breakdown votage

IE=1.0mA; IC=0

VCEsat Collector-emitter saturation voltage IC=5 A;IB=1A

VBEsat Base-emitter saturation voltage

IC=5 A;IB=1A

ICBO

Collector cut-off current

VCB=600V;IE=0

IEBO

Emitter cut-off current

VEB=5V; IC=0

hFE

DC current gain

IC=1A ; VCE=5V

Product Specification

2SC1433

MIN TYP. MAX UNIT

400

V

5

V

1.5

V

2.0

V

0.1 mA

0.1 mA

20

300

2

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