B762A Просмотр технического описания (PDF) - SavantIC Semiconductor

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производитель

B762A

Silicon PNP Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon PNP Power Transistors

Product Specification

2SB762 2SB762A

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO

Collector-emitter

breakdown voltage

2SB762

2SB762A

IC=-30mA; IB=0

VCEsat Collector-emitter saturation voltage IC=-4A;IB=-0.4 A

VBE

Base-emitter on voltage

IC=-3A ; VCE=-4V

ICES

Collector

cut-off current

2SB762

VCE=-60V; VBE=0

2SB762A VCE=-80V; VBE=0

ICEO

Collector

cut-off current

2SB762 VCE=-30V; IB=0

2SB762A VCE=-60V; IB=0

IEBO

Emitter cut-off current

VEB=-5V; IC=0

hFE-1

DC current gain

IC=-1A ; VCE=-4V

hFE-2

DC current gain

IC=-3A ; VCE=-4V

Switching times

ton

Turn-on time

toff

Turn-off time

IC=-4A ; IB1=-IB2=-0.4 A

MIN TYP. MAX UNIT

-60

V

-80

-1.5

V

-2.0

V

-400

µA

-700

µA

-7

mA

40

250

15

0.3

µs

1.3

µs

hFE-1 classifications

R

Q

P

40-90

70-150 120-250

2

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