2SB861 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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2SB861

Silicon PNP Triple Diffused

Hitachi -> Renesas Electronics 

2SB861

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Collector to emitter breakdown V(BR)CBO –150 —

voltage

Emitter to base breakdown

V(BR)EBO

–6

—

voltage

Collector cutoff current

I CBO

—

—

DC current transfer ratio

hFE1*1

60

—

hFE2

60

—

Collector to emitter saturation VCE(sat)

—

—

voltage

Base to emitter voltage

VBE

—

—

Collector output capacitance Cob

—

30

Notes: 1. The 2SB861 is grouped by hFE1 as follows.

2. Pulse test

Max Unit

—

V

—

V

–1

µA

200

—

–3

V

–1

V

—

pF

Test conditions

IC = –50 mA, RBE = ∞

IE = –5 mA, IC = 0

VCB = –120 V, IE = 0

VCE = –4 V, IC = –50 mA

VCE = –10 V, IC = –500 mA*2

IC = –500 mA, IB = –50 mA

VCE = –4 V, IC = –50 mA

VCB = –100 V, IE = 0,

f = 1 MHz

B

60 to 120

C

100 to 200

Maximum Collector Dissipation Curve

40

30

20

TC

10

1.8 W Ta

0

50

100

150

200

Ambient temperature Ta (°C)

Case temperature TC (°C)

Area of Safe Operation

–10

–5 IC (max) (Continuous)

–2

(–15 V, –2 A)

–1.0

–0.5

(–60 V, –0.4 A)

–0.2

–0.1

(–150 V, –65 mA)

–0.05

–2 –5 –10 –20 –50 –100 –200

Collector to emitter Voltage VCE (V)

2

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