2SB831BC Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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2SB831BC

Silicon PNP Epitaxial

Hitachi -> Renesas Electronics 

2SB831

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector peak current

Collector power dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCEO

VEBO

IC

iC(peak)

PC

Tj

Tstg

Ratings

Unit

–25

V

–20

V

–5

V

–0.7

A

–1

A

150

mW

150

°C

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Collector to base breakdown

V(BR)CBO

–25

—

voltage

Collector to emitter breakdown V(BR)CEO –20

—

voltage

Emitter to base breakdown

V(BR)EBO

–5

—

voltage

Collector cutoff current

I CBO

—

—

DC current transfer ratio

hFE*1

85

—

Collector to emitter saturation VCE(sat) —

—

voltage

Base to emitter voltage

VBE

—

—

Notes: 1. The 2SB831 is grouped by hFE as follows.

2. Pulse test

Grade

B

C

Mark

BB

BC

hFE

85 to 170 120 to 240

Max

—

—

—

–1.0

240

–0.5

–1.0

Unit

V

V

V

µA

V

V

Test conditions

IC = –10 µA, IE = 0

IC = –1 mA, RBE = ∞

IE = –10 µA, IC = 0

VCB = –20 V, IE = 0

VCE = –1 V, IC = –0.15 A*2

IC = –0.5 A, IB = –0.05 A*2

VCE = –1 V, IC = –0.15 A*2

See characteristic curves of 2SB561.

2

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