2SB791K Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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2SB791K

Silicon PNP Epitaxial

Hitachi -> Renesas Electronics 

2SB791(K)

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Collector to emitter breakdown V(BR)CEO –120 —

voltage

Emitter to base breakdown

V(BR)EBO

–7

—

voltage

Collector cutoff current

I CBO

—

—

I CEO

—

—

DC current transfer ratio

hFE

1000 —

Collector to emitter saturation VCE(sat)(1) —

—

voltage

VCE(sat)(2)

—

—

Base to emitter saturation

VBE(sat)(1)

—

—

voltage

VBE(sat)(2)

—

—

Turn on time

t on

—

0.5

Storage time

t stg

—

1.6

Fall time

tf

—

1.5

Note: 1. Pulse test

Max Unit

—

V

—

V

–100 µA

–10 µA

20000

–1.5 V

–3.0 V

–2.0 V

–3.5 V

—

µs

—

µs

—

µs

Test conditions

IC = –25 mA, RBE = ∞

IE = –50 mA, IC = 0

VCB = –120 V, IE = 0

VCE = –100 V, RBE = ∞

VCE = –3 V, IC = –4 A*1

IC = –4 A, IB = –8 mA*1

IC = –8 A, IB = –80 mA*1

IC = –4 A, IB = –8 mA*1

IC = –8 A, IB = –80 mA*1

IC = –4 A, IB1 = IB2 = –8 mA

Maximum Collector Dissipation

Curve

60

40

20

0

50

100

150

Case temperature TC (°C)

Area of Safe Operation

–30

iC(peak)

–10

1 µs

ICmax DC

–3 (Continuous) Operation

–1.0

–0.3 Ta = 25°C

1 Shot Pulse

–0.1

–0.03

–1 –3 –10 –30 –100 –300 –1,000

Collector to emitter voltage VCE (V)

2

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