2SB695 Просмотр технического описания (PDF) - SavantIC Semiconductor

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2SB695

Silicon PNP Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon PNP Power Transistors

Product Specification

2SB695

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-30mA ;IB=0

V(BR)CBO Collector-base breakdown voltage

IC=-1mA ;IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=-1mA ;IC=0

VCEsat Collector-emitter saturation voltage IC=-5A; IB=-0.5A

VBE

Base-emitter on voltage

IC=-1A;VCE=-5V

ICBO

Collector cut-off current

VCB=-170V; IE=0

IEBO

Emitter cut-off current

VEB=-5V; IC=0

hFE-1

DC current gain

IC=-1A ; VCE=-5V

hFE-2

DC current gain

IC=-5A ; VCE=-5V

fT

Transition frequency

IC=-1A ; VCE=-5V

MIN TYP. MAX UNIT

-120

V

-170

V

-5

V

-1.5

V

-1.5

V

-50 µA

-50 µA

40

200

20

7

MHz

2

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