2SB648 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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2SB648

PNP Epitaxial Transistors

Hitachi -> Renesas Electronics 

2SB648, 2SB648A

Electrical Characteristics (Ta = 25°C)

2SB648

2SB648A

Item

Symbol Min Typ Max Min Typ Max Unit Test conditions

Collector to base

breakdown voltage

V(BR)CBO

–180 —

—

–180 —

—

V

IC = –10 µA, IE = 0

Collector to emitter

breakdown voltage

V(BR)CEO

–120 —

—

–160 —

—

V

IC = –1 mA, RBE = ∞

Emitter to base

breakdown voltage

V(BR)EBO

–5

—

—

–5

—

—

V

IE = –10 µA, IC = 0

Collector cutoff current

DC current transfer

ratio

ICBO

h *1

FE1

Collector to emitter

saturation voltage

hFE2

VCE(sat)

Base to emitter voltage VBE

Gain bandwidth product fT

Collector output

Cob

capacitance

— — –10 — — –10 µA VCB = –160 V, IE = 0

60 — 320 60 — 200

VCE = –5 V,

IC = –10 mA

30 — — 30 — —

VCE = –5 V, IC = –1 mA

— — –2 — — –2 V

IC = –30 mA,

IB = –3 mA

— — –1.5 — — –1.5 V

VCE = –5 V,

IC = –10 mA

— 140 — — 140 — MHz VCE = –10 V,

IC = –10 mA

— 4.5 — — 4.5 — pF VCB = –10 V, IE = 0,

f = 1 MHz

Note: 1. The 2SB648 and 2SB648A are grouped by hFE1 as follows.

2SB648

2SB648A

B

60 to 120

60 to 120

C

100 to 200

100 to 200

D

160 to 320

—

2

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