2SB648A Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

Номер в каталоге

Компоненты Описание

Список матч

2SB648A

PNP Epitaxial Transistors

Hitachi -> Renesas Electronics 

2SB648, 2SB648A

Silicon PNP Epitaxial

Application

Low frequency high voltage amplifier complementary pair with 2SD668/A

Outline

TO-126 MOD

123

1. Emitter

2. Collector

3. Base

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector peak current

Collector power dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCEO

VEBO

IC

IC(peak)

PC

Tj

Tstg

Ratings

2SB648

2SB648A

Unit

–180

–180

V

–120

–160

V

–5

–5

V

–50

–50

mA

–100

–100

mA

1

1

W

150

150

°C

–55 to +150 –55 to +150 °C

Share Link: