2SB566AK Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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2SB566AK

Silicon PNP Triple Diffused

Hitachi -> Renesas Electronics 

2SB566(K), 2SB566A(K)

Electrical Characteristics (Ta = 25°C)

2SB566(K)

2SB566A(K)

Item

Symbol Min Typ Max Min Typ Max Unit Test conditions

Collector to base

breakdown voltage

V(BR)CBO

–70 —

—

–70 —

—V

IC = –10 µA, IE = 0

Collector to emitter

breakdown voltage

V(BR)CEO

–50 —

—

–60 —

—V

IC = –50 mA, RBE = ∞

Emitter to base

breakdown voltage

V(BR)EBO

–5

—

—

–5

—

—V

IE = –10 µA, IC = 0

Collector cutoff current ICBO

— — –1 — — –1 µA VCB = –50 V, IE = 0

DC current tarnsfer ratio hFE1*1

60 — 200 60 — 200

VCE = –4 V, IC = –1 A

hFE2

35 — — 35 — —

VCE = –4 V, IC = –0.1 A

Collector to emitter

saturation voltage

VCE(sat)

—

—

–1.0 —

—

–1.0 V

IC = –2 A, IB = –0.2 A

Base to emitter

saturation voltage

VBE(sat)

— — –1.2 — — –1.2 V

IC = –2 A, IB = –0.2 A

Gain bandwidth product fT

— 15 — — 15 —

Turn on time

t on

— 0.3 — — 0.3 —

Turn off time

t off

— 3.0 — — 3.0 —

Storage time

t stg

— 2.5 — — 2.5 —

Note: 1. The 2SB566(K) and 2SB566A(K) are grouped by hFE1 as follows.

MHz

µs

µs

µs

VCE = –4 V, IC = –0.5 A

VCC = –10.5 V

IC = 10IB1 = –10IB2 =

–0.5 A

B

60 to 120

C

100 to 200

2

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