2SB1399 Просмотр технического описания (PDF) - Renesas Electronics

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2SB1399

Silicon PNP Triple Diffused

Renesas Electronics 

2SB1399

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector peak current

Collector power dissipation

Junction temperature

Storage temperature

C to E diode forward current

Note: 1. Value at TC = 25°C.

Symbol

VCBO

VCEO

VEBO

IC

IC (peak)

PC

PC * 1

Tj

Tstg

ID*1

Ratings

Unit

–120

V

–120

V

–7

V

–10

A

–15

A

2

W

30

150

°C

–55 to +150

°C

10

A

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Collector to base breakdown V(BR)CBO –120 —

voltage

Collector to emitter breakdown V(BR)CEO –120 —

voltage

Emitter to base breakdown

V(BR)EBO

–7

—

voltage

Collector cutoff current

I CBO

—

—

I CEO

—

—

DC current transfer ratio

hFE

1000 —

Collector to emitter saturation VCE (sat)1 —

—

voltage

VCE (sat)2

—

—

Base to emitter saturation

VBE (sat)1

—

—

voltage

VBE (sat)2

—

—

C to E diode forward voltage VD

—

—

Note: 1. Pulse Test.

See switching characteristic curve of 2SB955(K).

Max Unit

—

V

—

V

—

V

–10 µA

–10

20000

–1.5 V

–3.0

–2.0 V

–3.5

3.0 V

Test Conditions

IC = –0.1 mA, IE = 0

IC = –25 mA, RBE = ∞

IE = –50 mA, IC = 0

VCB = –100 V, IE = 0

VCE = –100 V, RBE = ∞

VCE = –3 V, IC = –5 A*1

IC = –5 A, IB = 10 mA*1

IC = –10 A, IB = –100 mA*1

IC = –5 A, IB = 10 mA*1

IC = –10 A, IB = –100 mA*1

ID = 10 A*1

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