2SB1494 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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2SB1494

Silicon PNP Triple Diffused

Hitachi -> Renesas Electronics 

2SB1494

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector peak current

Collector power dissipation

Junction temperature

Storage temperature

C to E diode forward current

Note: 1. Value at TC = 25°C.

Symbol

VCBO

VCEO

VEBO

IC

I C(peak)

PC * 1

Tj

Tstg

ID*1

Ratings

Unit

–120

V

–120

V

–7

V

–25

A

–35

A

120

W

150

°C

–55 to +150

°C

25

A

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Collector to base breakdown V(BR)CBO –120 —

voltage

Collector to emitter breakdown V(BR)CEO –120 —

voltage

Collector to emitter sustain

voltage

VCEO(sus) –120 —

Emitter to base breakdown

V(BR)EBO

–7

—

voltage

Collector cutoff current

DC current transfer ratio

Collector to emitter saturation

voltage

Base to emitter saturation

voltage

Note: 1. Pulse test.

I CBO

I CEO

hFE1

hFE2

VCE(sat)1

VCE(sat)2

VBE(sat)1

VBE(sat)2

—

—

—

—

2000 —

500 —

—

—

—

—

—

—

—

—

Max Unit

—

V

—

V

—

V

—

V

–10 µA

–10

20000

—

–2.0 V

–3.5

–3.0 V

–4.5

Test conditions

IC = –0.1 mA, IE = 0

IC = –25 mA, RBE = ∞

IC = –200 mA, RBE = ∞

IE = –50 mA, IC = 0

VCB = –100 V, IE = 0

VCE = –100 V, RBE = ∞

VCE = –4 V, IC = –12 A*1

VCE = –4 V, IC = –25 A*1

IC = –12 A, IB = –24 mA*1

IC = –25 A, IB = –250 mA*1

IC = –12 A, IB = –24 mA

IC = –25 A, IB = –250 mA*1

2

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