2SB1409(L) Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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2SB1409(L)

Silicon PNP Epitaxial

Hitachi -> Renesas Electronics 

2SB1409(L)/(S)

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector peak current

Collector power dissipation

Junction temperature

Storage temperature

Note: 1. Value at TC = 25°C.

Symbol

VCBO

VCEO

VEBO

IC

I C(peak)

PC * 1

Tj

Tstg

Ratings

Unit

–180

V

–160

V

–5

V

–1.5

A

–3

A

18

W

150

°C

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ Max

Collector to base breakdown V(BR)CBO –180 —

—

voltage

Collector to emitter breakdown V(BR)CEO –160 —

—

voltage

Emitter to base breakdown

V(BR)EBO

–5

—

—

voltage

Collector cutoff current

I CBO

—

—

–10

DC current transfer ratio

hFE1*1

60

—

200

hFE2

30

—

—

Collector to emitter saturation VCE(sat)

—

—

–1

voltage

Base to emitter voltage

VBE

—

—

–1.5

Gain bandwidth product

fT

—

240 —

Collector output capacitance Cob

—

25

—

Notes: 1. The 2SB1409(L)/(S) is grouped by hFE1 as follows.

Unit

V

V

V

µA

V

V

MHz

pF

Test conditions

IC = –1 mA, IE = 0

IC = –10 mA, RBE = ∞

IE = –1 mA, IC = 0

VCB = –160 V, IE = 0

VCE = –5 V, IC = –150 mA*2

VCE = –5 V, IC = –500 mA*2

IC = –500 mA, IB = –50 mA

VCE = –5 V, IC = –150 mA

VCE = –5 V, IC = –150 mA

VCB = –10 A, IE = 0, f = 1 MHz

B

60 to 120

C

100 to 200

2. Pulse test.

2

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