B1392 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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B1392

Silicon PNP Triple Diffused

Hitachi -> Renesas Electronics 

2SB1392

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Collector to base breakdown V(BR)CBO –70 —

voltage

Collector to emitter breakdown V(BR)CEO –60 —

voltage

Emitter to base breakdown

V(BR)EBO

–5

—

voltage

Collector cutoff current

I CBO

—

—

I CEO

—

—

DC current transfer ratio

hFE1*2

60

—

hFE2

35

—

Base to emitter voltage

VBE

—

—

Collector to emitter saturation VCE(sat)

—

—

voltage

Base to emitter saturation

VBE(sat)

—

—

voltage

Notes: 1. Pulse test.

2. The 2SB1392 is grouped by hFE1 as follows.

Max Unit

—

V

—

V

—

V

–10 µA

–10

200

—

–1.0 V

–1.0 V

–1.2 V

Test conditions

IC = –10 µA, IE = 0

IC = –50 mA, RBE = ∞

IE = –10 µA, IC = 0

VCB = –50 V, IE = 0

VCE = –50 V, RBE = ∞

VCE = –4 V, IC = –1 A*1

VCE = –4 V, IC = –0.1 A*1

VCE = –4 V, IC = –1 A*1

IC = –2.0 A, IB = –0.2 A*1

IC = –2.0 A, IB = –0.2 A*1

B

60 to 120

C

100 to 200

Maximum Collector Dissipation Curve

30

20

10

0

50

100

150

Case Temperature TC (°C)

Area of Safe Operation

–10

–5 iC (peak)

–2 IC (max)

–1.0

–0.5

–0.2

–0.1

–0.05

Ta = 25°C

1 Shot pulse

–0.02

–0.01

–3

–10 –30

–100 –300

Collector to emitter Voltage VCE (V)

2

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