B1387 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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B1387

Silicon PNP Epitaxial, Darlington Transistor

Hitachi -> Renesas Electronics 

2SB1387

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector peak current

C to E diode forward current

Collector power dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCEO

VEBO

IC

iC(peak)

ID

PC

Tj

Tstg

Ratings

Unit

–120

V

–120

V

–7

V

–1.5

A

–3.0

A

1.5

A

0.9

W

150

°C

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Collector to base breakdown V(BR)CBO –120 —

voltage

Collector to emitter breakdown V(BR)CEO –120 —

voltage

Emitter to base breakdown

V(BR)EBO

–7

—

voltage

Collector cutoff current

DC current transfer ratio

Collector to emitter saturation

voltage

I CBO

I CEO

hFE

VCE(sat)1

—

—

—

—

2000 —

—

—

VCE(sat)2

—

—

Base to emitter saturation

VBE(sat)1

—

—

voltage

VBE(sat)2

—

—

C to E diode forward voltage VD

—

—

Note: 1. Pulse test

Max Unit

—

V

—

V

—

V

–1

µA

–10 µA

10000

–1.5 V

–2.0 V

–2.0 V

–2.5 V

3.0 V

Test conditions

IC = –0.1 mA, IE = 0

IC = –10 mA, RBE = ∞

IE = –50 mA, IC = 0

VCB = –100 V, IE = 0

VCE = –100 V, RBE = ∞

VCE = –3 V, IC = –1 A*1

IC = –1 A, IB = –1 mA*1

IC = –1.5 A, IB = –1.5 mA*1

IC = –1 A, IB = –1 mA*1

IC = –1.5 A, IB = –1.5 mA*1

ID = 1.5 A*1

2

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